AC NBTI of Ge pMOSFETs: Impact of Energy Alternating Defects on Lifetime Prediction

摘要

For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress.